SiGe Bipolar Silicon Germanium
High-speed Technology for Communications Applications
To get easy access to our SiGe foundry, customers can either participate in a Multi-Project Wafer at a fixed cost or order a fully dedicated technology run (Engineering Run) to their request.
Applications
• Tailored for Frequencies
from 0.9 up to 24 GHz
• Cellular Systems
• Networking Systems
• Wireless Systems
(e.g. WLAN, DECT, Bluetooth®)
• Satellite Communication
• Radar Systems
• Power Amplifiers, Low-noise Amplifiers
Development Support
Design Kits• Cadence®
• ADS
DRC and LVS Verification
Detailed Design Manual with Application Notes Available
Low-cost Prototyping
Multi Project Wafer Runs (MPW)
• Every 90 Days
Engineering Runs
Technical Parameters
Schematic Cross Section
of a SiGe2 NPN HBT
| Devices | SiGe2-RF |
SiGe2-POWER |
||
Types of npn-HBT (both available on one chip) |
2 |
2 |
||
| Min. emitter width [µm] | 0.5 |
0.5 |
||
| Base sheet resistance [Ω /sq.] | 2000 |
1350 |
||
| fT [GHz] | 50 |
80 |
35 |
45 |
| fmax [GHz] | 90 |
90 |
90 |
90 |
| Current gain | 300 |
350 |
200 |
200 |
| BVCEO [V] | 4.3 |
2.4 |
.5 |
4.5 |
| BVCBO [V] | 11.0 |
10.0 |
16.0 |
16.0 |
| Types of LPNP | 1 |
1 |
||
| Resistors [Ω /sq.] | 4, 150, 430, 1500 |
4, 150, 430, 1500 |
||
| MIM capacitor [fF/µm2] | 0.93 |
0.93 |
||
| Diodes | ||||
| Zener diodes VZ [V] | 6.2 |
6.8 |
||
| pn diodes Vf [V] / BV [V] | 0.7 / 11 |
0.7 / 16 |
||
| Varactor diodes C (0V) / C (3V) | 2.3 |
2.8 |
||
| Schottky diodes Vf [V] | 0.3 |
0.3 |
||
| ESD diodes (power clamp & rail clamp) | available |
available |
||
| Spiral inductors | available |
available |
||
| Min. pitch [µm] | 3 |
3 |
||
| Metal layers | 3 |
3 |
||