0.18um BCD Process with lateral and vertical
Dielectric Isolation with Isolated High-Voltage Drivers
180nm Bipolar-CMOS-DMOS (BCD) high voltage process with dielectric Isolation for robust high reliability applications using dense logic, analog functions and high-voltage MOS as well as bipolar drivers. The unique low cost SOI process targeting applications were cost-effective solutions for smart-power and robust, high reliability integrated circuits (automotive, medical, industrial, space) are coming together
Key Features:
- 0.18um CMOS logic dielectric isolated
- Extended Voltage range LDMOS devices from 5V to 120V (200V option)
- Aggressive Ron x Area product NDMOS for compact power switches
- Isolated lateral bipolar devices for low-noise analog and sensor functions
- Up to 6 metal layers, including thick metal, allow compact designs and high current capability
- Wide variety of resistors, inter-layer capacitors and diodes available
- Zener and avalanche diodes for references and ESD protection
Device |
Vt |
BV min |
Idsat uA/um |
Rdsx A
mohms-mm2 |
0.18u NMOS |
0.55V |
4v |
550 |
|
0.18u PMOS |
0.6V |
4V |
280 |
|
30V NDMOS |
1.6V |
>35V |
100 |
20 |
40V NDMOS |
1.6V |
>45V |
33 |
|
60V NDMOS |
1.6V |
>65V |
60 |
|
80V NDMOS |
1.6V |
>95V |
105 |
Key Electrical Parameters